Chip Lithography Machine

 

1. Exposure type: double-sided alignment and single-sided exposure

2. Exposure area: Ф150mm

3. Exposure intensity: 0～30mw/cm

4. Exposure illumination uniformity: ≥97%; UV beam angle: ≤3˚

5. Ultraviolet light source: LED, UV central wavelength: 365nm-460nm, factory standard 365nm, can be customized according to user requirements, light source warranty period: 1 year

6. Exposure mode: front and back alignment, front overlay exposure

7. Exposure method: close exposure

8. Exposure resolution: ≤1μm

9. Alignment range: X, Y±3mm; Q±3°, translation accuracy in X,

 

Chip lithography machine is a key equipment used to manufacture integrated circuit chips. It uses photolithography technology to accurately form circuit patterns on the surface of the silicon wafer by shining a light source on the silicon wafer and using a combination of photoresist and mask to achieve micron-level pattern transfer.

 

The chip lithography machine has the characteristics of high resolution, high precision and high speed, which can meet the needs of today's integrated circuit industry for micron-level devices. It can accurately copy the pattern on the mask to the silicon wafer, ensuring the precision and stability of circuit components.

 

Modern lithography machines are usually equipped with advanced optical systems, autofocus functions, intelligent exposure control, high-speed motion control and other technologies, which can achieve complex processing tasks such as multiple exposures and multi-layer superpositions. At the same time, it also has a high degree of automation, which can improve production efficiency and reduce labor costs.

 

This equipment is mainly used for the development and production of small and medium-sized integrated circuits, semiconductor components, and surface acoustic wave devices. Due to its advanced leveling mechanism and small leveling force, this machine is not only suitable for exposure of various types of substrates, but also suitable for easy broken

 

Exposure of substrates such as potassium arsenide, indium phosphide, etc., as well as exposure of non-circular substrates and small substrates.

 

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